to-126c plastic-encapsulate d transistors 2sb649/2SB649A transistor (pnp) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -1.5 a collector-base voltage v (br)cbo : -180 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -1 ma, i e =0 -180 v collector-emitter breakdown voltage v (br)ceo ic= -10 ma, i b =0 2sb649 2SB649A -120 -160 v emitter-base breakdown voltage v (br)ebo i e = -1m a, i c =0 -5 v collector cut-off current i cbo v cb = -160 v, i e =0 -10 a emitter cut-off current i ebo v eb = -4 v, i c =0 -10 a h fe(1) v ce =-5v, i c = -150 ma 2sb649 2SB649A 60 60 320 200 dc current gain h fe(2) v ce = -5 v, i c = -500 ma 30 collector-emitter saturation voltage v ce(sat) i c = -500 ma, i b = -50 ma -1 v base-emitter voltage v be v ce = -5 v, i c = -150 ma -1.5 v transition frequency f t v ce = -5 v, i c = -150 ma 140 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 27 pf classification of h fe(1) rank b c d range 60-120 100-200 160-320 marking 1 2 3 to-126c 1. emitter 2. collector 3. base transys electronics li m ite d
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